The semiconductor detector comprises a first metal contact, a base region made of silicon and a second metal contact forming two Schottky diodes. It comprises planarly arranged pairs of Schottky diodes with two symmetrical barriers, first and second conductive tracks made of aluminum connecting the first and second contacts, respectively, a dielectric layer made of silicon nitride and an insulating layer made of silicon oxide, forming a detector matrix, and an alternating current generator, a phase inverter and a synchronous detector are arranged around the matrix, the first aluminum track being connected to the output of the alternating current generator and the input of the phase inverter and the second aluminum track being connected to the synchronous detector and the output of the phase inverter.

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